Product Description
Graphene film Growth Method: CVD synthesis Transfer Method: Clean transfer method Quality Control: Optical Microscopy & Raman checked Size: 1 cm x 1 cm Appearance (Color): Transparent Transparency: >97% Appearance (Form): Film Coverage: >95% Number of graphene layers: 1 Thickness (theoretical): 0.345 nm FET Electron Mobility on Al2O3: 2; 000 cm2/V·s FET Electron Mobility on SiO2/Si (expected): 4; 000 cm2/V·s Sheet Resistance: 600 Ohms/sq. Grain size: Up to 10 μm Substrate Size: 1.25 cm x 1.25 cm Type/Dopant: P/B Orientation: 100 Growth Method: CZ Resistivity: 1-30 ohmcm Thickness: 525 +/- 25μm Front Surface: polished Back Surface: etched Coating: 300 nm thermal oxide on both wafer sides
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Collaboration
Tony Tang
Email: Tony.Tang@iright.com
Mobile/WhatsApp/Wechat: +86-17717886924